Journal Article

FZJ-2015-00940

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Analysis of As/GaAs quantum dot solar cells using Suns-Voc measurements

Beattie, N. S. (Corresponding Author) ; Zoppi, G. ; See, P. ; Farrer, I. ; Duchamp, M.FZJ* ; Morrison, D. J. ; Miles, R. W. ; Ritchie, D. A.

2014
North Holland Amsterdam

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Please use a persistent id in citations: http://hdl.handle.net/2128/8303  doi:10.1016/j.solmat.2014.07.022

Abstract: The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage relative to a control device without quantum dots. This improvement is explained using optical data while structural imaging of quantum dot stacks confirm that the devices are not limited by strain. The evolution of the open circuit voltage as a function of number of suns concentration was observed to be nearly ideal when compared with a high performance single junction GaAs solar cell. Analysis of Suns-Voc measurements reveal diode ideality factors as low as 1.16 which is indicative of a low concentration of defects in the devices.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 42G - Peter Grünberg-Centre (PG-C) (POF2-42G41) (POF2-42G41)

Appears in the scientific report 2014

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Database coverage:
; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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