Journal Article

FZJ-2015-02789

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride-9

Engels, S. (Corresponding Author)FZJ* ; Terrés, B. ; Klein, F.FZJ* ; Reichardt, S. ; Goldsche, M.FZJ* ; Kuhlen, S. ; Watanabe, K. ; Taniguchi, T. ; Stampfer, C.FZJ*

2014
Wiley-VCH Weinheim

This record in other databases:    

Please use a persistent id in citations: doi:10.1002/pssb.201451384

Abstract: We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
2. HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) (HITEC-20170406)

Appears in the scientific report 2014

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---