Journal Article

FZJ-2015-03123

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Gasparyan, F. ; Zadorozhnyi, I.FZJ* ; Vitusevich, S. (Corresponding Author)FZJ*

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/16794  doi:10.1063/1.4919816

Abstract: The basic reason for enhanced electron capture time, τc , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τc slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n+-p-n+ FETs, the experimentally observed slope of τc equals (−1). On the contrary, for the case of p+-p-p+ Si FETs in the accumulation regime, the experimentally observed slope of τc equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

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Contributing Institute(s):

1. Bioelektronik (PGI-8)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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