Journal Article

FZJ-2015-05142

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Agafonov, O. B. ; Dais, C. ; Grützmacher, D.FZJ* ; Haug, R. J.

2010
American Inst. of Physics Melville, NY

This record in other databases:  

Please use a persistent id in citations: http://hdl.handle.net/2128/17315  doi:10.1063/1.3442508

Abstract: Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Gequantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Gequantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

---

Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---