Journal Article FZJ-2015-05367

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Polymorphous GdScO$_{3}$ as high permittivity dielectric

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2015
Elsevier Lausanne

Journal of alloys and compounds 651, 514–520 () [10.1016/j.jallcom.2015.08.135]

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Abstract: Four different polymorphs of GdScO3 are assessed theoretically and experimentally with respectto their suitability as a dielectric. The calculations carried out by density functional theory reveallattice constants, band gaps and the energies of formation of three crystal phases. Experimentallyall three crystal phases and the amorphous phase can be realized as thin films by pulsed laserdeposition using various growth templates. Their respective crystal structures are confirmed byx-ray diffraction and transmission electron microscopy reflecting the calculated lattice constants.X-ray photoelectron spectroscopy unveils the band gaps of the different polymorphs of GdScO3which are above 5 eV for all films demonstrating good insulating properties. From capacitancevoltage measurements, high permittivities of up to 27 for hexagonal GdScO3 are deduced.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
  3. Quanten-Theorie der Materialien (PGI-1)
  4. Mikrostrukturforschung (PGI-5)
  5. Elektronische Eigenschaften (PGI-6)
  6. Quanten-Theorie der Materialien (IAS-1)
  7. Analytik (ZEA-3)
Research Program(s):
  1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
  2. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015
Database coverage:
Medline ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Institute Collections > ZEA > ZEA-3
Institute Collections > PGI > PGI-6
Institute Collections > PGI > PGI-5
Institute Collections > PGI > PGI-1
Institute Collections > PGI > PGI-9
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 Record created 2015-08-24, last modified 2024-06-10


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