Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Greenlee, Jordan D.; Koehler, Andrew D.; Anderson, Travis J.; Specht, Petra; Kub, Francis J.; Weatherford, Todd R.; Weaver, Bradley D.; Hobart, Karl D.; Luysberg, Martina; Dubon, Oscar D.

doi:10.1063/1.4929583

Journal Article

FZJ-2015-05483

Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs

Greenlee, J. D. (Corresponding author) ; Specht, P. ; Anderson, T. J. ; Koehler, A. D. ; Weaver, B. D. ; Luysberg, M.FZJ* ; Dubon, O. D. ; Kub, F. J. ; Weatherford, T. R. ; Hobart, K. D.

2015
American Inst. of Physics Melville, NY

Applied physics letters 107(8), 083504 - (2015) [10.1063/1.4929583]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17312 doi:10.1063/1.4929583

Abstract: Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 1014 H+/cm2, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.

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