Effect of Si-doping on InAs nanowire transport and morphology

Wirths, S.; Demarina, N.; Sladek, K.; Volk, C.; Schäpers, Th.; Weirich, T.E.; Hardtdegen, H.; Grützmacher, D.; von der Ahe, M.; Weis, K.; Winden, A.; Lüth, H.; Alagha, S.

doi:10.1063/1.3631026

Journal Article

Effect of Si-doping on InAs nanowire transport and morphology

Wirths, S.FZJ* ; Weis, K.FZJ* ; Winden, A.FZJ* ; Sladek, K.FZJ* ; Volk, C.FZJ* ; Alagha, S.FZJ* ; Weirich, T. E. ; von der Ahe, M.FZJ* ; Hardtdegen, H.FZJ* ; Lüth, H.FZJ* ; Demarina, N.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2011
American Institute of Physics Melville, NY

Journal of applied physics 110, 053709 (2011) [10.1063/1.3631026]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7461 doi:10.1063/1.3631026

Abstract: The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026]

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