Journal Article

PreJuSER-23231

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Structural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy

Limbach, F.FZJ* ; Gotschke, T.FZJ* ; Stoica, T.FZJ* ; Calarco, R.FZJ* ; Sutter, E. ; Ciston, J. ; Cusco, R. ; Artus, L. ; Kremling, S. ; Höfling, S. ; Worschech, L. ; Grützmacher, D.FZJ*

2011
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7620  doi:10.1088/0957-4484/22/7/075601

Abstract: The structural and optical properties of InGaN/GaN nanowire heterostructures grown by plasma-assisted molecular beam epitaxy have been studied using a combination of transmission electron microscopy, electron tomography and photoluminescence spectroscopy. It is found that, depending on In content, the strain relaxation of InGaN may be elastic or plastic. Elastic relaxation results in a pronounced radial In content gradient. Plastic relaxation is associated with the formation of misfit dislocations at the InGaN/GaN interface or with cracks in the InGaN nanowire section. In all cases, a GaN shell was formed around the InGaN core, which is assigned to differences in In and Ga diffusion mean free paths.

Keyword(s): J

Note: This work was partly supported by the French National Research Agency (ANR) through Carnot founding and through Nanoscience and Nanotechnology Program (Project BONAFO No ANR-08-NANO-031-01).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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