Journal Article

PreJuSER-24217

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Improved designs of tunable ferroelectric capacities for microwave applications

Ott, R.FZJ* ; Wördenweber, R.FZJ*

2002
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2062  doi:10.1063/1.1459486

Abstract: Epitaxial SrTiO3 films are deposited by on-axis magnetron sputtering on CeO2-buffered r-cut sapphire. The ferroelectric films possess low losses (e.g., tan deltaapproximate to0.001-0.004 at 300 K) and a large tunability at small electric fields. Different complex designs for ferroelectric capacities are prepared via dry etching ranging from standard designs to those in which the ferroelectric material is restricted to the gap of the capacity. The resulting capacity data can be explained in terms of an analytic model for parallel capacities. Due to modifications and optimization of the design, the quality factors for an improved capacity design exceeds the requirement for most applications K>45 already for extremely small voltages Uapproximate to18 V, which demonstrates the good properties of the design in combination with the quality of our ferroelectric films. (C) 2002 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Bio- und Chemosensoren (ISG-2)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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