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| Hauptseite > Publikationsdatenbank > Influence of strain on binding energies of Si atoms at Ge(111) surfaces |
| Hauptseite > Publikationsdatenbank > Influence of strain on binding energies of Si atoms at Ge(111) surfaces |
| Journal Article | PreJuSER-24641 |
;
2002
Elsevier
Amsterdam
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Please use a persistent id in citations: doi:10.1016/S0039-6028(02)01684-9
Abstract: Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated Ge surface covered with a monolayer of Bi is studied by scanning tunneling microscopy. Spatial ordering of the islands with respect to the modulations of the strain field shows that the binding energy of Si atoms at strained Si islands is, unexpectedly, higher than at unstrained islands. This behavior is explained by a strong compressive stress of the surfactant layer, which favors an expansion of the underlying surface structures and therefore stabilizes the tensile strained Si islands. It is shown that a Si mass transport towards more strained Si islands can be also favored by an increased binding energy of Si adatoms to the less strained parts of the Ge surface. (C) 2002 Elsevier Science B.V. All rights reserved.
Keyword(s): J ; surface stress (auto) ; surface diffusion (auto) ; scanning tunneling microscopy (auto) ; epitaxy (auto) ; germanium (auto) ; silicon (auto) ; bismuth (auto) ; semiconductor-semiconductor thin film structures (auto)
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