Contribution to a conference proceedings

FZJ-2015-07817

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Experimental demonstration of improved analog device performance in GAA-NW-TFETs

Schulte-Braucks, C. (Corresponding author)FZJ* ; Richter, S.FZJ* ; Knoll, L.FZJ* ; Selmi, L.Extern* ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ*

2014
IEEE
ISBN: 978-1-4799-4378-4

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Please use a persistent id in citations: doi:10.1109/ESSDERC.2014.6948789

Abstract: We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10 nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V^−1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt=Vd=−1V were achieved for the GAA-NW-TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20 nm FinFETs.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2015

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