Journal Article

FZJ-2016-00558

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical switching of an antiferromagnet

Wadley, P. (Corresponding author) ; Howells, B. ; Zelezny, J. ; Andrews, C. ; Hills, V. ; Campion, R. P. ; Novak, V. ; Olejnik, K. ; Maccherozzi, F. ; Dhesi, S. S. ; Martin, S. Y. ; Wagner, T. ; Wunderlich, J. ; Freimuth, F.FZJ* ; Mokrousov, Y.FZJ* ; Kunes, J. S. ; Chauhan, J. S. ; Grzybowski, M. J. ; Rushforth, A. W. ; Edmonds, K. W. ; Gallagher, B. L. ; Jungwirth, T.

2016
American Association for the Advancement of Science64196 Washington, DC [u.a.]

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Please use a persistent id in citations: http://hdl.handle.net/2128/22946  doi:10.1126/science.aab1031

Abstract: Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IAS-1)
2. Quanten-Theorie der Materialien (PGI-1)
3. JARA - HPC (JARA-HPC)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)
2. Magnetic Anisotropy of Metallic Layered Systems and Nanostructures (jiff13_20131101) (jiff13_20131101)

Appears in the scientific report 2016

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