Journal Article

PreJuSER-32025

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png (Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor

Regnery, S.FZJ* ; Ehrhart, P.FZJ* ; Fitsilis, F.FZJ* ; Waser, R.FZJ* ; Ding, Y.FZJ* ; Jia, C. L.FZJ* ; Schumacher, M. ; Schienle, F.

2003
Elsevier Science Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/S0955-2219(03)00235-8

Abstract: Thin films of different compositions within the (Ba-x,Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)(2), Ba(thd)(2) and Ti(O-i-Pr)(2)(thd)(2) precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed. (C) 2003 Elsevier Ltd. All rights reserved.

Keyword(s): J ; BaTiO3 and titanates (auto) ; capacitors (auto) ; dielectric properties (auto) ; electron microscopy (auto) ; thin films (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Mikrostrukturforschung (IFF-IMF)
3. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004

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