Journal Article PreJuSER-40397

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Photoenhanced wet etching of gallium nitride in KOH-based solution

 ;  ;  ;

2001
Inst. New York, NY

Journal of vacuum science & technology / B 19, 1721 ()

Classification:

Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
  2. Institut für Bio- und Chemosensoren (ISG-2)
Research Program(s):
  1. Halbleiterbauelemente und Analytik (29.88.0)
  2. Ionen- und Lithographietechnik (29.86.0)

Appears in the scientific report 2001
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The record appears in these collections:
Document types > Articles > Journal Article
Institute Collections > PGI > PGI-9
Workflow collections > Public records
IBN > IBN-2
Publications database

 Record created 2012-11-13, last modified 2018-02-10



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