Journal Article

PreJuSER-40407

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oblique stacking of three-dimensional dome islands in Ge/Si multilayers

Sutter, P. ; Mateeva-Sutter, R. T. ; Vescan, L.FZJ*

2001
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1991  doi:10.1063/1.1357214

Abstract: The organization of Ge "dome" islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge domes are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain, generated by the already buried islands, and surface curvature, caused by the inherent tendency of large domes to carve out material from the surrounding planar substrate. (C) 2001 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)

Appears in the scientific report 2001
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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Database coverage:

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