Quantitative ellipsometric microscopy at the silicon-air interface

Linke, F.; Merkel, R.

doi:10.1063/1.1921547

Journal Article

PreJuSER-45682

Quantitative ellipsometric microscopy at the silicon-air interface

Linke, F.FZJ* ; Merkel, R.FZJ*

2005
American Institute of Physics [S.l.]

Review of scientific instruments 76, 063701 (2005) [10.1063/1.1921547]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2177 doi:10.1063/1.1921547

Abstract: Ellipsometric microscopy is a technique that combines the merits of ellipsometry and light microscopy, i.e., it allows noninvasive, label-free measurements of thin film thickness and refractive index at high lateral resolution. Here we give a detailed description of the technique including a complete calibration scheme and a model to correct for the instrumental polarization of the imaging optics. The performance of the instrument was studied experimentally. We found a lateral resolution of 1 mu m and an absolute height accuracy of 3 nm. The measured refractive indices were accurate to 2.3% and the height sensitivity of the instrument was smaller than 5 A. Another virtue of the instrument design besides its good performance is that it is in essence an extension of standard light microscopy and could be integrated into commercial microscopes. (c) 2005 American Institute of Physics.

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