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Journal Article | PreJuSER-48878 |
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2005
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/1012 doi:10.1063/1.2084322
Abstract: We report on the integration of fully functional ferroelectric PbTiO3 nanostructures of typically less than 100 nm lateral extension into a low-k dielectric hydrogen silsesquioxane film. Chemical mechanical polishing of the dielectric layer down to an overall thickness below the nanoparticles height exposes the structures. After confirmation of the piezoelectricity of individual embedded grains, gold electrode pads are deposited to characterize several of these grains in parallel. Evidence of ferroelectric switching is observed and discussed within an equivalent circuit model. This paves the way to a better integration and statistical analysis of ferroelectric nanostructures. (C) 2005 American Institute of Physics.
Keyword(s): J
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