Journal Article

PreJuSER-50976

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png New Growth Mode through Decorated Twin Boundaries

Bleikamp, S. ; Thoma, A. ; Polop, C.FZJ* ; Pirug, G.FZJ* ; Linke, U.FZJ* ; Michely, T.

2006
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/2169  doi:10.1103/PhysRevLett.96.115503

Abstract: Scanning tunneling microscopy and low energy electron diffraction were used to investigate the growth of partly twinned Ir thin films on Ir(111). A transition from the expected layer-by-layer to a defect dominated growth mode with a fixed lateral length scale and increasing roughness is observed. During growth, the majority of the film is stably transformed to twinned stacking. This transition is initiated by the energetic avoidance of the formation of intrinsic stacking faults compared to two independent twin faults. The atomistic details of the defect kinetics are outlined.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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Database coverage:

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