Journal Article

PreJuSER-56544

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Comparison of three different architectures for active resistive memories

Mustafa, J.FZJ* ; Rüdiger, A.FZJ* ; Waser, R.FZJ*

2007
Elsevier München

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Please use a persistent id in citations: doi:10.1016/j.aeue.2006.06.004

Abstract: Resistive memory (RRAM) is one of the strong emerging technologies in modern memory field. This type of memories has the potential to be the replacement of several current memory types. As any new technology, RRAM brings new challenges concerning technology and design. This work discusses some aspects concerning the design of active resistive memories and compares three possible memory architectures. (C) 2006 Elsevier GmbH. All rights reserved.

Keyword(s): J ; hysteretic resistive elements (auto) ; RRAM (auto) ; memory architecture (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2007

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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