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| Hauptseite > Publikationsdatenbank > Resistive switching in Ge0.3Se0.7 films by means of copper ion migration |
| Hauptseite > Publikationsdatenbank > Resistive switching in Ge0.3Se0.7 films by means of copper ion migration |
| Journal Article | PreJuSER-58290 |
; ; ;
2007
Oldenbourg
München
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Please use a persistent id in citations: http://hdl.handle.net/2128/18340 doi:10.1524/zpch.2007.221.11-12.1469
Abstract: Cu/Ge0.3Se0.7/Pt cells were prepared and bipolar resistive switching in Ge0.3Se0.7 films by means of copper ion migration was examined. The cell was switched from the high to the low resistance state at about -50mV, and it was switched back to the high resistance state at about 100mV. The resistance ratio between the high and the low state was up to 200. Up to approximately 10(4) switching cycles were achieved. Pulse measurements showed that the two resistance states were tuneable by varying the applied voltage and the pulse length. Therefore, it is possible to store more than one bit per cell. The current density is independent of the electrode diameter, indicating that the cell can be scaled down to the range of nanometers. Due to the low switching voltages, non-destructive read out operation, high storage density, and scalability, such cells are promising for future memory applications.
Keyword(s): J ; resistive switching (auto) ; non-volatile memory (auto) ; chalcogenide films (auto) ; ion migration (auto)
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