Journal Article

FZJ-2016-02140

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Transformation of metallic boron into substitutional dopants in graphene on 6 H − SiC ( 0001 )

Sforzini, J.FZJ* ; Telychko, M. ; Krejčí, O. ; Vondráček, M. ; Švec, M. ; Bocquet, F. C. (Corresponding author) ; Tautz, F. S.FZJ*

2016
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10075  doi:10.1103/PhysRevB.93.041302

Abstract: We investigate the development of the local bonding and chemical state of boron atoms during the growth of B-doped graphene on 6H−SiC(0001). Photoemission experiments reveal the presence of two chemical states, namely, boron in the uppermost SiC bilayers and boron substituted in both the graphene and buffer layer lattices. We demonstrate the participation of the dopant in the π electron system of graphene by the presence of the π∗ resonance in the near edge x-ray adsorption fine structure (NEXAFS) recorded at the B K-edge. The experimental findings are supported by NEXAFS simulations.

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 142 - Controlling Spin-Based Phenomena (POF3-142) (POF3-142)

Appears in the scientific report 2016

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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