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| Hauptseite > Publikationsdatenbank > Space charges and defect concentration profiles at complex oxide interfaces |
| Hauptseite > Publikationsdatenbank > Space charges and defect concentration profiles at complex oxide interfaces |
| Journal Article | FZJ-2016-03490 |
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2016
APS
College Park, Md.
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Please use a persistent id in citations: http://hdl.handle.net/2128/11682 doi:10.1103/PhysRevB.93.245431
Abstract: We discuss electronic and ionic defect concentration profiles at the conducting interface between the two wide-band-gap insulators LaAlO3 and SrTiO3 (STO). The profiles are deduced from a thermodynamic model considering a local space charge layer (SCL) originating from charge transfer to the interface region, thus combining electronic and ionic reconstruction mechanisms. We show that the electrical potential confining the two-dimensional electron gas (2DEG) at the interface modifies the equilibrium defect concentrations in the SCL. For the n-conducting interface, positively charged oxygen vacancies are depleted within the SCL, while negatively charged strontium vacancies accumulate. Charge compensation within the SCL is achieved by a mixed ionic-electronic interface reconstruction, while the competition between 2DEG and localized ionic defects is controlled by ambient pO2. The concentration of strontium vacancies increases drastically in oxidizing conditions and exhibits a steep depth profile towards the interface. Accounting for the low cation diffusivity in STO, we also discuss kinetic limitations of cation defect formation and the effect of a partial equilibration of the cation sublattice. We discuss the resulting implications for low temperature transport
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; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz
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