Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys

Wendav, Torsten; Fischer, Inga A.; von den Driesch, Nils; Klesse, Wolfgang; Oehme, Michael; Busch, Kurt; Schulze, Jörg; Capellini, Giovanni; Zoellner, Marvin Hartwig; Buca, Dan; Montanari, Michele

doi:10.1063/1.4953784

Journal Article

FZJ-2017-00162

Compositional dependence of the band-gap of Ge$_{1−x−y}$Si$_{x}$Sn$_{y}$ alloys

Wendav, T. (Corresponding author) ; Fischer, I. A. ; Montanari, M. ; Zoellner, M. H. ; Klesse, W. ; Capellini, G. ; von den Driesch, N.FZJ* ; Oehme, M. ; Buca, D.FZJ* ; Busch, K. ; Schulze, J. (Corresponding author)

2016
American Inst. of Physics Melville, NY

Applied physics letters 108(24), 242104 - (2016) [10.1063/1.4953784]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17235 doi:10.1063/1.4953784

Abstract: The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

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