Journal Article

FZJ-2017-02580

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ballistic Transport Exceeding 28 μm in CVD Grown Graphene

Banszerus, L.RWTH* ; Schmitz, M.RWTH* ; Engels, S.RWTH* ; Goldsche, M.FZJ*RWTH* ; Watanabe, K. ; Taniguchi, T. ; Beschoten, B.RWTH* ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2016
ACS Publ. Washington, DC

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Please use a persistent id in citations: http://hdl.handle.net/2128/22756  doi:10.1021/acs.nanolett.5b04840

Abstract: We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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