Journal Article

FZJ-2018-02598

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells

Köhler, M. (Corresponding author)FZJ* ; Pomaska, M.FZJ* ; Lentz, F.FZJ* ; Finger, F.FZJ* ; Rau, U.FZJ* ; Ding, K.FZJ*

2018
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsami.8b02002

Abstract: Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO2, in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm2 were achieved using μc-SiC:H(n)/SiO2/c-Si as transparent passivated contacts.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2018

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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