Contribution to a conference proceedings/Contribution to a book

FZJ-2019-00012

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx

Han, Q. (Corresponding author)FZJ* ; Tromm, T. C. U.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*

2018
IEEE Piscataway, NJ
ISBN: 978-1-5386-4811-7, 9781538648100, 9781538648124 (print)

This record in other databases:

Please use a persistent id in citations: doi:10.1109/ULIS.2018.8354733

Abstract: Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

---