Journal Article

FZJ-2019-00072

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes523

Kutovyi, Y.FZJ* ; Zadorozhnyi, I.FZJ* ; Handziuk, V.FZJ* ; Hlukhova, H.FZJ* ; Boichuk, N.FZJ* ; Petrychuk, M.Extern*FZJ* ; Vitusevich, S. (Corresponding author)FZJ*

2018
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.nanolett.8b03508

Abstract: We fabricate two-layer (TL) silicon nanowires (NW) field-effect transistors (FETs) with a liquid gate. The NW devices show advanced characteristics, which reflect reliable single-electron phenomena. A strong modulation effect of channel conductivity with effectively tuned parameters is revealed. The effect opens up prospects for applications in several research fields including bioelectronics and sensing applications. Our results shed light on the nature of single trap dynamics which parameters can be fine-tuned to enhance the sensitivity of liquid-gated TL silicon nanowire FETs.

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Contributing Institute(s):

1. Bioelektronik (ICS-8)

Research Program(s):

1. 523 - Controlling Configuration-Based Phenomena (POF3-523) (POF3-523)

Appears in the scientific report 2018

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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