Journal Article

FZJ-2019-00889

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays

Bhattacharjee, D. ; Siemon, A. ; Linn, E. ; Menzel, S.FZJ* ; Chattopadhyay, A.

2018
Association for Computing Machinery New York, NY

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Please use a persistent id in citations: doi:10.1145/3183352

Abstract: Low operating voltage, high storage density, non-volatile storage capabilities, and relative low access latencies have popularized memristive devices as storage devices. Memristors can be ideally used for in-memory computing in the form of hybrid CMOS nano-crossbar arrays. In-memory serial adders have been theoretically and experimentally proven for crossbar arrays. To harness the parallelism of memristive arrays, parallel-prefix adders can be effective. In this work, a novel mapping scheme for in-memory Kogge-Stone adder has been presented. The number of cycles increases logarithmically with the bit width N of the operands, i.e., O(log2N), and the device count is 5N. We verify the correctness of the proposed scheme by means of TaO× device model-based memristive simulations. We compare the proposed scheme with other proposed schemes in terms of number of cycle and number of devices

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2018

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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