Journal Article FZJ-2019-01962

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Nonequilibrium Green's function picture of nonradiative recombination of the Shockley-Read-Hall type



2019
Inst. Woodbury, NY

Physical review / B 99(12), 125302 () [10.1103/PhysRevB.99.125302]

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Abstract: A quantum-kinetic picture of Shockley-Read-Hall-type (SRH) defect-mediated recombination is derived within the nonequilibrium Green's function formalism for an optoelectronic device with selectively contacted, current-carrying extended states and a localized deep defect state in the energy gap. The theory is first tested for recombination from bulk band states and then implemented for defective bipolar homo- and heterojunction thin-film devices with realistic spatial variation of the band edge profile. While the quantum-kinetic treatment reproduces the semiclassical characteristics for a bulk absorber in flat-band and quasiequilibrium conditions, for which the conventional SRH picture is valid, it reveals nonclassical features such as recombination enhancement by tunneling into field-induced subgap states in the presence of large fields, or the complex recombination current flow at heterointerfaces. Being fully compatible with the rigorous treatment of electron-photon and electron-phonon scattering in the nonequilibrium Green's function (NEGF) formalism, the approach enables a consistent inclusion of defect-mediated nonradiative recombination in comprehensive NEGF simulations of nanostructure-based quantum optoelectronic devices such as quantum well lasers, LEDs and solar cells.

Classification:

Contributing Institute(s):
  1. Photovoltaik (IEK-5)
  2. JARA - HPC (JARA-HPC)
Research Program(s):
  1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)
  2. Ab-initio description of charge carrier dynamics at defective interfaces in solar cells (jiek50_20171101) (jiek50_20171101)

Appears in the scientific report 2019
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 Record created 2019-03-18, last modified 2024-07-12