Journal Article FZJ-2019-02008

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Tuning Methods for Semiconductor Spin Qubits

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2018
American Physical Society College Park, Md. [u.a.]

Physical review applied 10(5), 054026 () [10.1103/PhysRevApplied.10.054026]

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Abstract: We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are developed for double quantum dots in GaAs heterostructures, but they can easily be adapted to other quantum-dot-based qubit systems. These tuning procedures include the characterization of the interdot tunnel coupling, the tunnel coupling to the surrounding leads, and the identification of various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot’s parameters will only grow in the near future, once the multiqubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds and require almost no human interference.

Classification:

Contributing Institute(s):
  1. JARA Institut Quanteninformation (PGI-11)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 144 - Controlling Collective States (POF3-144) (POF3-144)

Appears in the scientific report 2019
Database coverage:
Medline ; American Physical Society Transfer of Copyright Agreement ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Record created 2019-03-21, last modified 2021-01-30