Journal Article

FZJ-2020-00821

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Room temperature in-situ measurement of the spin voltage of a BiSbTe3 thin film

Leis, A.FZJ* ; Schleenvoigt, M.FZJ* ; Jalil, A. R.FZJ* ; Cherepanov, V.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ* ; Tautz, F. S.FZJ* ; Voigtländer, B. (Corresponding author)FZJ*

2020
Macmillan Publishers Limited, part of Springer Nature [London]

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Please use a persistent id in citations: http://hdl.handle.net/2128/24399  doi:10.1038/s41598-020-59679-9

Abstract: One of the hallmarks of topological insulators (TIs), the intrinsic spin polarisation in the topologically protected surface states, is investigated at room temperature in-situ by means of four-probe scanning tunnelling microscopy (STM) for a BiSbTe3 thin film. To achieve the required precision of tip positions for measuring a spin signal, a precise positioning method employing STM scans of the local topography with each individual tip is demonstrated. From the transport measurements, the spin polarisation in the topological surface states (TSS) is estimated as p ~ 0.3 – 0.6, which is close to the theoretical limit.

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Contributing Institute(s):

1. Funktionale Nanostrukturen an Oberflächen (PGI-3)
2. Halbleiter-Nanoelektronik (PGI-9)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 522 - Controlling Spin-Based Phenomena (POF3-522) (POF3-522)

Appears in the scientific report 2020

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