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| Hauptseite > Publikationsdatenbank > A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$ |
| Hauptseite > Publikationsdatenbank > A First-Principles Study on the Role of Defects and Impurities in $\beta-In_2S_3$ |
| Contribution to a conference proceedings/Contribution to a book | FZJ-2020-01426 |
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2020
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
Jülich
Please use a persistent id in citations: http://hdl.handle.net/2128/24516
Abstract: CdS is a well-established buffer layer for Cu(In, Ga)(S, Se)$_2$ (CIGS)-based thin film solar cells. However, because of its toxicity, low quantum efficiency at blue-wavelength region, and the drawbacks of the chemical bath deposition technique used for its growth, looking for an alternative buffer material has been a matter of debate in recent years. In this context, $\beta-In_2S_3$ is considered as a promising substitution for CdS. $\beta-In_2S_3$ crystallises in an ordered vacancy spinel-like structure, which can accommodate impurities diffusing from the absorber and/or front contact layers. Due to the existence of structural vacancies in its crystalline matrix, the electronic and optical properties of $\beta-In_2S_3$ can be effectively tuned through (un)intentional doping with a third element. In this contribution, we will report on the origin of n-type conductivity of $\beta-In_2S_3$, the influence of Cu and Na incorporation, the thermodynamic stability and electronic properties of $\beta-In_2S_3$, and the influence of O and Cl on electronic properties of $\beta-In_2S_3$.
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Book/Proceedings
NIC Symposium 2020: proceedings
NIC Symposium, JülichJülich, Germany, 27 Feb 2020 - 28 Feb 2020
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, NIC Series 50, v, 424 S. (2020)
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