Journal Article

FZJ-2020-02156

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Insulating State in Low‐Disorder Graphene Nanoribbons

Epping, A.RWTH* ; Volk, C.RWTH* ; Buckstegge, F.RWTH* ; Watanabe, K. ; Taniguchi, T. ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2019
Wiley-VCH Weinheim

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Please use a persistent id in citations: http://hdl.handle.net/2128/24941  doi:10.1002/pssb.201900269

Abstract: Quantum transport measurements on etched graphene nanoribbons encapsulated in hexagonal boron nitride (hBN) are reported. At zero magnetic field, the devices behave qualitatively very similar to those reported for graphene nanoribbons on SiO2 or hBN, but exhibit a considerably smaller transport gap. At magnetic fields of around 3 T, the transport behavior changes significantly and is dominated by a much larger energy gap induced by electron– electron interactions which completely suppress the transport. This energy gap increases with a slope in the order of 3–4 meV T−1, reaching values of up to 30 meV at 9 T.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2020

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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