Journal Article

FZJ-2020-02441

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Identifying suitable substrates for high-quality graphene-based heterostructures

Banszerus, L.RWTH* ; Janssen, H.RWTH* ; Otto, M. ; Epping, A.RWTH* ; Taniguchi, T. ; Watanabe, K. ; Beschoten, B.FZJ*RWTH* ; Neumaier, D. ; Stampfer, C. (Corresponding author)FZJ*RWTH*

2017
IOP Publ. Bristol

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Please use a persistent id in citations: http://hdl.handle.net/2128/25200  doi:10.1088/2053-1583/aa5b0f

Abstract: We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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