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| Hauptseite > Publikationsdatenbank > Ferroelectric State in an α-Nd 2 WO 6 Polymorph Stabilized in a Thin Film |
| Hauptseite > Publikationsdatenbank > Ferroelectric State in an α-Nd 2 WO 6 Polymorph Stabilized in a Thin Film |
| Journal Article | FZJ-2021-02874 |
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2020
American Chemical Society
Washington, DC
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Please use a persistent id in citations: http://hdl.handle.net/2128/28085 doi:10.1021/acs.chemmater.0c01405
Abstract: Taking advantage of strain engineering, Nd2WO6 (NdWO) thin films have been successfully grown on (001)-oriented SrTiO3 single-crystal substrates by pulsed-laser deposition. High-resolution X-ray diffraction characterizations highlight the stabilization of a new orthorhombic (Pm21n) NdWO polymorphic form, isostructural to α-La2WO6. Reciprocal space mappings have been used in the determination of the NdWO thin-film structure. Coupled with the 2θ-ω X-ray patterns, the cell parameters were calculated: a = 16.34(5) Å, b = 5.46(5) Å, and c = 8.68(1) Å. X-ray-diffraction pole-figure measurements show the crystallographic relationships between the film and substrate: [100]NdWO∥[110]STO, [010]NdWO∥[11̅0]STO, and [001]NdWO∥[001]STO. Both X-ray diffraction and transmission electron microscopy studies reveal the existence of (510)-oriented crystallites with respect to the plane of the substrate mainly at the interface film/substrate and dispersed in the (001)-NdWO matrix. In addition, robust piezoelectricity and ferroelectricity are revealed at room temperature through both local hysteresis loops and domain manipulation experiments using the piezoresponse force microscopy technique. Typical polarization retention behaviors associated with specific nanoscale conduction are in good agreement with the classical ferroelectric phenomenon in oxide materials. The successful observation of piezo-/ferroelectricity at room temperature in innovative strain-stabilized α-NdWO thin films paves the way for new lead-free functional materials devoted to numerous applications, including actuators, sensors, or nonvolatile memory devices.
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