Journal Article

FZJ-2022-01362

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism

Heisig, T. ; Lange, K. ; Gutsche, A.FZJ* ; Goß, K. T.FZJ* ; Hambsch, S.FZJ* ; Locatelli, A. ; Menteş, T. O. ; Genuzio, F. ; Menzel, S.FZJ* ; Dittmann, R. (Corresponding author)FZJ*

2022
Wiley-VCH Verlag GmbH & Co. KG Weinheim

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Please use a persistent id in citations: http://hdl.handle.net/2128/31709  doi:10.1002/aelm.202100936

Abstract: Resistive switching in metal oxides is believed to be caused by a temperature and electric field driven redistribution of oxygen vacancies within a nanometer sized conductive filament. Accordingly, gaining detailed information about the chemical composition of conductive filaments is of key importance for a comprehensive understanding of the switching process. In this work, spectromicroscopy is used to probe the electronic structure of conductive filaments in Ta2O5-based memristive devices. It is found that resistive switching leads to the formation of a conductive filament with an oxygen vacancy concentration of ≈20%. Spectroscopic insights provide detailed information about the chemical state of the tantalum cations and show that the filament is not composed of a metallic Ta0 phase. As an extreme case, devices after an irreversible dielectric breakdown are investigated. These devices feature larger conductive channels with higher oxygen vacancy concentrations. Using the experimental data as input for finite element simulations, the role of thermodiffusion for the formation process of conductive filaments is revealed. It is demonstrated that thermodiffusion is not the dominating effect for the filament formation here but might play a role in accelerating the forming process, as well as in the stabilization of the filament.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)
3. JARA Institut Green IT (PGI-10)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)
3. ACA - Advanced Computing Architectures (SO-092) (SO-092)
4. BMBF-16ES1134 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC - (BMBF-16ES1134) (BMBF-16ES1134)

Appears in the scientific report 2022

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; DEAL Wiley ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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