Journal Article

FZJ-2022-01903

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications

Xi, F.FZJ* ; Han, Y.FZJ* ; Grenmyr, A.FZJ* ; Grutzmacher, D.FZJ* ; Zhao, Q.-T.FZJ*

2022
IEEE [New York, NY]

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Please use a persistent id in citations: http://hdl.handle.net/2128/31702  doi:10.1109/JEDS.2022.3166449

Abstract: In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization switching dynamics gradually modulate the Schottky barriers, thus programming the device conductance by applying negative or postive pulses to imitate the excitation and inhibition behaviors of the biological synapse. The excitatory post-synaptic current can be modulated by the back-gate bias, enabling the reconfiguration of the weight profile with high speed of 20 ns and low energy (< 1 fJ/spike) consumption. Besides, the tunable long term potentiation and depression show high endurance and very small cycle-to-cycle variations. Based on the good linearity, high symmetricity and large dynamic range of the synaptic weight updates, a high recognition accuracy (92.6%) is achieved for handwritten digits by multilayer perceptron artificial neural networks. These findings demonstrate FE-SBFET has high potential as an ideal synaptic component for the future intelligent neuromorphic network.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2022

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