Journal Article

FZJ-2023-01766

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical Influence of Carbon Interface Layers in Metal/Oxide Resistive Switches

Cho, D.-Y. ; Kim, K.-j. ; Lee, K.-S. ; Lübben, M. ; Chen, S. ; Valov, I. (Corresponding author)FZJ*

2023
Soc. Washington, DC

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Please use a persistent id in citations: doi:10.1021/acsami.3c00920  doi:10.34734/FZJ-2023-01766

Abstract: Thin layers introduced between a metal electrode and a solid electrolyte can significantly alter the transport of mass and charge at the interfaces and influence the rate of electrode reactions. C films embedded in functional materials can change the chemical properties of the host, thereby altering the functionality of the whole device. Using X-ray spectroscopies, here we demonstrate that the chemical and electronic structures in a representative redox-based resistive switching (RS) system, Ta2O5/Ta, can be tuned by inserting a graphene or ultrathin amorphous C layer. The results of the orbitalwise analyses of synchrotron Ta L3-edge, C K-edge, and O K-edge X-ray absorption spectroscopy showed that the C layers between Ta2O5 and Ta are significantly oxidized to form COx and, at the same time, oxidize the Ta layers with different degrees of oxidation depending on the distance: full oxidation at the nearest 5 nm Ta and partial oxidation in the next 15 nm Ta. The depth-resolved information on the electronic structure for each layer further revealed a significant modification of the band alignments due to C insertion. Full oxidation of the Ta metal near the C interlayer suggests that the oxygen-vacancy-related valence change memory mechanism for the RS can be suppressed, thereby changing the RS functionalities fundamentally. The knowledge on the origin of C-enhanced surfaces can be applied to other metal/oxide interfaces and used for the advanced design of memristive devices.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

Appears in the scientific report 2023

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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