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| Hauptseite > Publikationsdatenbank > Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces |
| Hauptseite > Publikationsdatenbank > Composition dependence of intrinsic surface states and Fermi-level pinning at ternary Al x Ga1− x N m -plane surfaces |
| Journal Article | FZJ-2024-04929 |
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2024
Inst.
New York, NY
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Please use a persistent id in citations: doi:10.1116/6.0003225 doi:10.34734/FZJ-2024-04929
Abstract: Growth on nonpolar group III-nitride semiconductor surfaces has been suggested to be a remedy for avoiding detrimental polarization effects. However, the presence of intrinsic surface states within the fundamental bandgap at nonpolar surfaces leads to a Fermi-level pinning during growth, affecting the incorporation of dopants and impurities. This is further complicated by the use of ternary, e.g., Al(x)Ga(1-x)N layers in device structures. In order to quantify the Fermi-level pinning on ternary group III nitride nonpolar growth surface, the energy position of the group III-derived empty dangling bond surface state at nonpolar Al(x)Ga(1-x)N (10-10) surfaces is determined as a function of the Al concentration using cross-sectional scanning tunneling microscopy and spectroscopy. The measurements show that the minimum energy of the empty dangling bond state shifts linearly toward midgap for increasing Al concentration with a slope of ~5 meV/%. These experimental findings are supported by complementary density functional theory calculations.
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