Journal Article

PreJuSER-11286

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.FZJ* ; Emam, M. ; Sandow, C.FZJ* ; Knoch, J.FZJ* ; Zhao, Q. T.FZJ* ; Raskin, J.-P. ; Mantl, S.FZJ*

2010
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2010.2045220

Abstract: We present a detailed direct current and radiofrequency study of fully depleted dopant-segregated Schottky barrier (SB) MOSFETs on thin-body Silicon-on-Insulator. On-wafer scattering-parameter measurements of n-type NiSi source/drain SB-MOSFETs provide an in-depth understanding of key device parameters (transconductances and capacitances) as a function of the implanted arsenic dose, i. e., different SB height. Devices with 80-nm-channel length show a high ON current of 1150 mA/mm and exhibit a unity-gain cutoff frequency of f(T) = 140 GHz.

Keyword(s): J ; Dopant segregation (DS) (auto) ; MOSFET (auto) ; NiSi (auto) ; radio frequency (RF) (auto) ; scattering-parameters (S-parameters) (auto) ; Schottky barrier (SB) (auto)

Note: This work was supported by the European Community's Seventh Framework Program (FP7/2007-2013) under Grant 216171. The review of this letter was arranged by Editor C. Bulucea.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)
2. NANOSIL - Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (216171) (216171)

Appears in the scientific report 2010

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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