Journal Article

FZJ-2013-01884

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Silicon germanium tin alloys formed by pulsed laser induced epitaxy

Stefanov, S. (Corresponding author) ; Conde, J. C. ; Benedetti, A. ; Serra, C. ; Werner, J. ; Oehme, M. ; Schulze, J. ; Buca, D. M.FZJ* ; Holländer, B.FZJ* ; Mantl, S.FZJ* ; Chiussi, S.

2012
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/5077  doi:10.1063/1.4714768

Abstract: Pulsed lased induced epitaxy is used to obtain heteroepitaxial Ge1−xSnx and Si1−x−yGexSny alloys with graded composition on Si(001) substrates. The transition from Ge1−xSnx to Si1−x−yGexSny was achieved by varying the number of laser pulses accordingly with the level of intermixing between Si, Ge, and Sn. Melt duration, predicted by numerical methods, is experimentally confirmed by "in-situ" reflectivity measurements and relates, like the end reflectivity value, to the level of intermixing. The possibility to adjust concentration profiles through laser processing of Sn films on virtual germanium buffer layers for lattice engineering of Ge1−xSnx and Si1−x−yGexSny alloys on silicon substrates is demonstrated.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012

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Database coverage:
; ; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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