Journal Article

FZJ-2013-02534

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Long electron spin coherence in ion-implanted GaN: The role of localization

Buß, (Corresponding author) ; Rudolph, J.Extern* ; Shvarkov, S. ; Hardtdegen, H.FZJ* ; Wieck, A. D. ; Hägele, D.

2013
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17362  doi:10.1063/1.4804558

Abstract: The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 422 - Spin-based and quantum information (POF2-422) (POF2-422)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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