Tensely strained GeSn alloys as optical gain media

Wirths, S.; Mussler, G.; Benedetti, A.; Buca, D.; Stoica, T.; Hartmann, J. M.; Breuer, U.; Ikonic, Z.; Chiussi, S.; Holländer, B.; Mantl, S.; Grützmacher, D.; Tiedemann, Andreas

doi:10.1063/1.4829360

Journal Article

FZJ-2013-05331

Tensely strained GeSn alloys as optical gain media

Wirths, S. (Corresponding author)FZJ* ; Ikonic, Z. ; Tiedemann, A.FZJ* ; Holländer, B.FZJ* ; Stoica, T.FZJ* ; Mussler, G.FZJ* ; Breuer, U.FZJ* ; Hartmann, J. M. ; Benedetti, A. ; Chiussi, S. ; Grützmacher, D.FZJ* ; Mantl, S.FZJ* ; Buca, D.FZJ*

2013
American Institute of Physics Melville, NY

Applied physics letters 103(19), 192110 - (2013) [10.1063/1.4829360]

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Please use a persistent id in citations: http://hdl.handle.net/2128/5554 doi:10.1063/1.4829360

Abstract: This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94Sn0.06 and even without any n-type doping for Ge 0.92Sn0.08.

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