Journal Article

FZJ-2013-06671

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

Liu, L. (Corresponding author)FZJ* ; Jin, L.FZJ* ; Knoll, L.FZJ* ; Wirths, S.FZJ* ; Nichau, A.FZJ* ; Buca, D.FZJ* ; Mussler, G.FZJ* ; Holländer, B.FZJ* ; Xu, D.FZJ* ; Feng Di, Z. ; Zhang, M. ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ*

2013
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17342  doi:10.1063/1.4838695

Abstract: We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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