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| Hauptseite > Publikationsdatenbank > Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators |
| Hauptseite > Publikationsdatenbank > Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators |
| Journal Article | FZJ-2014-05067 |
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2014
APS
College Park, Md.
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Please use a persistent id in citations: http://hdl.handle.net/2128/9114 doi:10.1103/PhysRevLett.113.096601
Abstract: We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the “symmetry filtration” the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.
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