Hauptseite > Publikationsdatenbank > Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices |
Journal Article | FZJ-2014-05321 |
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2014
Wiley-VCH
Weinheim
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Please use a persistent id in citations: doi:10.1002/adma.201304054
Abstract: By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
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