Journal Article

FZJ-2015-00021

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Hexagonal LaLuO3 as high-κ dielectric

Schäfer, A. (Corresponding Author)FZJ* ; Wendt, F.FZJ* ; Mantl, S.FZJ* ; Hardtdegen, H.FZJ* ; Mikulics, M.FZJ* ; Schubert, J.FZJ* ; Luysberg, M.FZJ* ; Besmehn, A.FZJ* ; Niu, G. ; Schroeder, T.

2015
Inst. New York, NY

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Please use a persistent id in citations: doi:10.1116/1.4904401

Abstract: Among the different polymorphs of LaLuO3 the hexagonal one is the least explored. Therefore, in this work, hexagonal LaLuO3 is grown and investigated in more detail. Two different growth templates are presented, offering the possibility to stabilize this hexagonal phase: Y2O3 on Si (111) and GaN on Al2O3 (0001). The LaLuO3 layers show smooth surfaces and high crystallinity for both types of templates. Spectroscopic characterization reveals a wide bandgap Eg of 5.6 eV and capacitance voltage measurements display a relative permittivity κ of 26, which makes hexagonal LaLuO3 a promising candidate as a future gate dielectric for devices based on hexagonal semiconductors such as GaN.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Mikrostrukturforschung (PGI-5)
3. Analytik (ZEA-3)
4. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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