Journal Article

PreJuSER-18762

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Field effect transistor based on single crystalline InSb nanowire

Wang, Y. ; Chi, J. ; Banerjee, K. ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ* ; Lu, J. G.FZJ*

2011
ChemSoc London

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Please use a persistent id in citations: http://hdl.handle.net/2128/7373  doi:10.1039/c0jm03855e

Abstract: InSb nanowires with zinc-blende crystal structure and precise stoichiometry are synthesized via pulsed-laser chemical vapor deposition. Raman spectroscopy shows Stokes and anti-Stokes peaks of transverse-optical mode with asymmetric broadening. The nanowire demonstrates n-type semiconductor behavior. Enhanced surface scattering due to size confinement leads to reduced electron mobility.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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Database coverage:

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