Journal Article

FZJ-2015-02595

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effective mass of a two-dimensional √3×√3 Ga single atomic layer on Si(111)

Schnedler, M.FZJ* ; Jiang, Y. ; Wu, K. H. ; Wang, E. G. ; Dunin-Borkowski, R.FZJ* ; Ebert, P. (Corresponding Author)FZJ*

2014
Elsevier Amsterdam

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Please use a persistent id in citations: doi:10.1016/j.susc.2014.07.024

Abstract: The effective mass of the empty conduction band surface state of a single atomic √3 × √3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of meff,C = 0.59 ± 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 42G - Peter Grünberg-Centre (PG-C) (POF2-42G41) (POF2-42G41)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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