Journal Article

FZJ-2015-02658

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reduction of skin effect losses in double-level-T-gate structure

Mikulics, M. (Corresponding Author)FZJ* ; Hardtdegen, H.FZJ* ; Arango, Y.FZJ* ; Adam, R.FZJ* ; Fox, A.FZJ* ; Grützmacher, D.FZJ* ; Gregušová, D. ; Stanček, S. ; Novák, J. ; Kordoš, P. ; Sofer, Z. ; Juul, L. ; Marso, M.

2014
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17329  doi:10.1063/1.4903468

Abstract: We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length Lg¼200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 lm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of fmax value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2014

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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